RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HMT41GU7MFR8A-H9 8GB
Gloway International (HK) STK4U2400D15082C 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB vs Gloway International (HK) STK4U2400D15082C 8GB

总分
star star star star star
SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

总分
star star star star star
Gloway International (HK) STK4U2400D15082C 8GB

Gloway International (HK) STK4U2400D15082C 8GB

差异 规格 评论

差异

SK Hynix HMT41GU7MFR8A-H9 8GB 需要考虑的原因
SK Hynix HMT41GU7MFR8A-H9 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 80
    左右 66% 更低的延时
  • 更快的读取速度，GB/s
    14.8 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 8.1
    测试中的平均数值
Gloway International (HK) STK4U2400D15082C 8GB 需要考虑的原因
Gloway International (HK) STK4U2400D15082C 8GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT41GU7MFR8A-H9 8GB
Gloway International (HK) STK4U2400D15082C 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 80
  • 读取速度，GB/s
    14.8 left arrow 14.7
  • 写入速度，GB/s
    9.0 left arrow 8.1
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2650 left arrow 1775

SK Hynix HMT41GU7MFR8A-H9 8GB RAM的比较

Kingston 9965525-018.A00LF 4GB
SK Hynix HMT41GU7MFR8A-PB 8GB

Gloway International (HK) STK4U2400D15082C 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B5173CB0-YK0 4GB
Samsung M471B5173CB0-YK0 4GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMW64GX4M4K3600C18 16GB
Corsair CMW64GX4M4K3600C18 16GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3466C16-8GTZKW 8GB
G Skill Intl F4-3466C16-8GTZKW 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Samsung M378A1K43BB1-CPB 8GB
Samsung M378A1K43BB1-CPB 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Samsung M393A2G40EB2-CTD 16GB
Samsung M393A2G40EB2-CTD 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMWX8GD3600C18W4 8GB
Corsair CMWX8GD3600C18W4 8GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Hewlett-Packard 7EH64AA# 8GB
Hewlett-Packard 7EH64AA# 8GB
内存RAM
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905678-005.A00G 8GB
Kingston 9905678-005.A00G 8GB
内存RAM