SK Hynix HMT41GU7MFR8A-H9 8GB vs Kingston 9905713-008.A00G 4GB

总分

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

总分

Kingston 9905713-008.A00G 4GB

Kingston 9905713-008.A00G 4GB

差异规格评论

差异

SK Hynix HMT41GU7MFR8A-H9 8GB

需要考虑的原因
SK Hynix HMT41GU7MFR8A-H9 8GB

报告一个错误

更快的读取速度，GB/s

14.8 12.2

测试中的平均数值
更快的写入速度，GB/s

9.0 5.6

测试中的平均数值

Kingston 9905713-008.A00G 4GB

需要考虑的原因
Kingston 9905713-008.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 -4% 更低的延时
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT41GU7MFR8A-H9 8GB

Kingston 9905713-008.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 26
读取速度，GB/s

14.8 12.2
写入速度，GB/s

9.0 5.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2650 1970

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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A-DATA Technology AM2P24HC4R1-BUPS 4GB

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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

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Samsung DDR3 8GB 1600MHz 8GB

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Golden Empire CL15-17-17 D4-2666 8GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology CT16G4DFRA266.C8FB 16GB

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Micron Technology ILG8GS2400A 8GB

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Crucial Technology CT8G4DFD8213.16FA11 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

G Skill Intl F4-3600C17-16GTZKK 16GB

G Skill Intl F4-3600C17-16GTZKK 16GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Kingston 9905743-034.A00G 8GB

Kingston 9905743-034.A00G 8GB