SK Hynix HMT41GU7MFR8A-H9 8GB vs Nanya Technology M471A5143EB1-CRC 4GB

总分

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

总分

Nanya Technology M471A5143EB1-CRC 4GB

Nanya Technology M471A5143EB1-CRC 4GB

差异规格评论

差异

SK Hynix HMT41GU7MFR8A-H9 8GB

需要考虑的原因
SK Hynix HMT41GU7MFR8A-H9 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 79

左右 66% 更低的延时
更快的读取速度，GB/s

14.8 14.7

测试中的平均数值
更快的写入速度，GB/s

9.0 7.9

测试中的平均数值

Nanya Technology M471A5143EB1-CRC 4GB

需要考虑的原因
Nanya Technology M471A5143EB1-CRC 4GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT41GU7MFR8A-H9 8GB

Nanya Technology M471A5143EB1-CRC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 79
读取速度，GB/s

14.8 14.7
写入速度，GB/s

9.0 7.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2650 1710

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMH32GX4M4E3200C16 8GB

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Crucial Technology BLT4G3D1337DT1TX0. 4GB

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Kingston KHX2133C11D3/4GX 4GB

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Samsung M471B5173QH0-YK0 4GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Micron Technology 8ATF1G64HZ-2G3H1 8GB

Micron Technology 8ATF1G64HZ-2G3H1 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Mushkin 99[2/7/4]191F 4GB

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Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BL8G30C15U4B.8FE 8GB

Crucial Technology BL8G30C15U4B.8FE 8GB