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SK Hynix HMT425S6AFR6A-PB 2GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
比较
SK Hynix HMT425S6AFR6A-PB 2GB vs Crucial Technology CT16G4SFRA32A.C16FP 16GB
总分
SK Hynix HMT425S6AFR6A-PB 2GB
总分
Crucial Technology CT16G4SFRA32A.C16FP 16GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT425S6AFR6A-PB 2GB
报告一个错误
低于PassMark测试中的延时,ns
28
46
左右 39% 更低的延时
需要考虑的原因
Crucial Technology CT16G4SFRA32A.C16FP 16GB
报告一个错误
更快的读取速度,GB/s
16.1
12.6
测试中的平均数值
更快的写入速度,GB/s
15.1
8.2
测试中的平均数值
更高的内存带宽,mbps
25600
12800
左右 2 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT425S6AFR6A-PB 2GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
46
读取速度,GB/s
12.6
16.1
写入速度,GB/s
8.2
15.1
内存带宽,mbps
12800
25600
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
1822
2973
SK Hynix HMT425S6AFR6A-PB 2GB RAM的比较
Crucial Technology CT51264BF160BJ.C8F 4GB
SK Hynix HMT325S6CFR8C-PB 2GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT425S6AFR6A-PB 2GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3200C14-16GFX 16GB
Kingston KVR16N11/8-SP 8GB
Corsair CMSX32GX4M2A3200C22 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Essencore Limited KD48GS88A-26N1600 8GB
Samsung M393B1K70QB0-CK0 8GB
Samsung M471A1K43CBCBCRC 8GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-3600C16-8GTRG 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kingston KKRVFX-MIE 8GB
Mushkin 991988 (996988) 4GB
Panram International Corporation W4U2400PS-8G 8GB
Corsair CML8GX3M2A1866C9 4GB
Teikon TMA81GS6CJR8N-VKSC 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-4000C17-16GTZRB 16GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3200C16-16GTZR 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Golden Empire CL16-18-18 D4-3000 16GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-4400C17-16GTZR 16GB
报告一个错误
×
Bug description
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