RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology BL8G30C15U4W.8FE 8GB

SK Hynix HMT425S6CFR6A-PB 2GB vs Crucial Technology BL8G30C15U4W.8FE 8GB

总分
star star star star star
SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分
star star star star star
Crucial Technology BL8G30C15U4W.8FE 8GB

Crucial Technology BL8G30C15U4W.8FE 8GB

差异 规格 评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB 需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB
报告一个错误
Crucial Technology BL8G30C15U4W.8FE 8GB 需要考虑的原因
Crucial Technology BL8G30C15U4W.8FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 41
    左右 -24% 更低的延时
  • 更快的读取速度，GB/s
    19.7 left arrow 10.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology BL8G30C15U4W.8FE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 33
  • 读取速度，GB/s
    10.1 left arrow 19.7
  • 写入速度，GB/s
    7.1 left arrow 14.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1484 left arrow 3401

SK Hynix HMT425S6CFR6A-PB 2GB RAM的比较

Ramaxel Technology RMT3170MP68F9F1600 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB

Crucial Technology BL8G30C15U4W.8FE 8GB RAM的比较

Kingston 9965525-140.A00LF 8GB
AMD R5316G1609U2K 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology BL8G30C15U4W.8FE 8GB
Crucial Technology BL8G30C15U4W.8FE 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kllisre M378A5143EB2-CRC 4GB
Kllisre M378A5143EB2-CRC 4GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-4000C18-32GTRS 32GB
G Skill Intl F4-4000C18-32GTRS 32GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
G Skill Intl F4-3600C17-16GTZKK 16GB
G Skill Intl F4-3600C17-16GTZKK 16GB
内存RAM
Kingston 99U5428-040.A00LF 4GB
Kingston 99U5428-040.A00LF 4GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
内存RAM
Apacer Technology 78.A1GA0.9L4 2GB
Apacer Technology 78.A1GA0.9L4 2GB
Dust Leopard DDR4-2400 C16 8GB 8GB
Dust Leopard DDR4-2400 C16 8GB 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905702-002.A00G 8GB
Kingston 9905702-002.A00G 8GB
内存RAM
PNY Electronics 64C0MHHHJ-HS 4GB
PNY Electronics 64C0MHHHJ-HS 4GB
Kingston 9965669-019.A00G 16GB
Kingston 9965669-019.A00G 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Gloway International (HK) STK2133C15-8GB 8GB
Gloway International (HK) STK2133C15-8GB 8GB
内存RAM
Samsung M471B1G73EB0-YK0 8GB
Samsung M471B1G73EB0-YK0 8GB
Apacer Technology 78.BAGN8.40C0B 4GB
Apacer Technology 78.BAGN8.40C0B 4GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Corsair CMW16GX4M2D3600C16 8GB
Corsair CMW16GX4M2D3600C16 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
G Skill Intl F4-4000C17-8GTZRB 8GB
G Skill Intl F4-4000C17-8GTZRB 8GB
内存RAM