SK Hynix HMT425S6CFR6A-PB 2GB vs Crucial Technology BLS4G4D240FSA.M8FADG 4GB

总分

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分

Crucial Technology BLS4G4D240FSA.M8FADG 4GB

Crucial Technology BLS4G4D240FSA.M8FADG 4GB

差异规格评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB

需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB

报告一个错误

Crucial Technology BLS4G4D240FSA.M8FADG 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSA.M8FADG 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 41

左右 -78% 更低的延时
更快的读取速度，GB/s

16.6 10.1

测试中的平均数值
更快的写入速度，GB/s

12.4 7.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT425S6CFR6A-PB 2GB

Crucial Technology BLS4G4D240FSA.M8FADG 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 23
读取速度，GB/s

10.1 16.6
写入速度，GB/s

7.1 12.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1484 2785

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Samsung M3 78T2863EHS-CF7 1GB

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Smart Modular SF464128CKHI6DFSEG 4GB

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Corsair CMX4GX3M1A1333C9 4GB

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Wilk Elektronik S.A. IR2133D464L15S/4G 4GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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G Skill Intl F4-3200C15-8GTZKY 8GB

Samsung M471B5273DH0-CH9 4GB

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Samsung M378B5673FH0-CH9 2GB

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Samsung M392A4K40BM0-CRC 32GB

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Kingston 9905471-002.A00LF 2GB

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UMAX Technology D4-2400-4GB-512X8-L 4GB

UMAX Technology D4-2400-4GB-512X8-L 4GB