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SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology BLS4G4D240FSB.8FAR 4GB

SK Hynix HMT425S6CFR6A-PB 2GB vs Crucial Technology BLS4G4D240FSB.8FAR 4GB

总分
star star star star star
SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分
star star star star star
Crucial Technology BLS4G4D240FSB.8FAR 4GB

Crucial Technology BLS4G4D240FSB.8FAR 4GB

差异 规格 评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB 需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB
报告一个错误
Crucial Technology BLS4G4D240FSB.8FAR 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSB.8FAR 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 41
    左右 -78% 更低的延时
  • 更快的读取速度，GB/s
    16.3 left arrow 10.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology BLS4G4D240FSB.8FAR 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 23
  • 读取速度，GB/s
    10.1 left arrow 16.3
  • 写入速度，GB/s
    7.1 left arrow 12.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1484 left arrow 2809

SK Hynix HMT425S6CFR6A-PB 2GB RAM的比较

Ramaxel Technology RMT3170MP68F9F1600 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB

Crucial Technology BLS4G4D240FSB.8FAR 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology BLS4G4D240FSB.8FAR 4GB
Crucial Technology BLS4G4D240FSB.8FAR 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMK16GX4M1A2400C16 16GB
Corsair CMK16GX4M1A2400C16 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3200C14-8GTZN 8GB
G Skill Intl F4-3200C14-8GTZN 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMK64GX4M4B3333C16 16GB
Corsair CMK64GX4M4B3333C16 16GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Samsung M378A5244CB0-CRC 4GB
Samsung M378A5244CB0-CRC 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Apacer Technology 78.C2GFA.AF30B 8GB
Apacer Technology 78.C2GFA.AF30B 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMU32GX4M4C3000C16 8GB
Corsair CMU32GX4M4C3000C16 8GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
G Skill Intl F4-2800C16-8GVG 8GB
G Skill Intl F4-2800C16-8GVG 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A2G43BB2-CWE 16GB
Samsung M471A2G43BB2-CWE 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4DFS824A.M8FGM 8GB
Crucial Technology CT8G4DFS824A.M8FGM 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston KHX2666C15S4/8G 8GB
Kingston KHX2666C15S4/8G 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM