SK Hynix HMT425S6CFR6A-PB 2GB vs Crucial Technology CT8G4SFS824A.C8FP 8GB

总分

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分

Crucial Technology CT8G4SFS824A.C8FP 8GB

Crucial Technology CT8G4SFS824A.C8FP 8GB

差异规格评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB

需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB

报告一个错误

Crucial Technology CT8G4SFS824A.C8FP 8GB

需要考虑的原因
Crucial Technology CT8G4SFS824A.C8FP 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 41

左右 -32% 更低的延时
更快的读取速度，GB/s

16 10.1

测试中的平均数值
更快的写入速度，GB/s

13.1 7.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT425S6CFR6A-PB 2GB

Crucial Technology CT8G4SFS824A.C8FP 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 31
读取速度，GB/s

10.1 16.0
写入速度，GB/s

7.1 13.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1484 2999

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Crucial Technology CT8G4SFS824A.C8FP 8GB

Crucial Technology CT8G4SFS824A.C8FP 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Crucial Technology CT8G4SFD824A.C16FADP 8GB

Crucial Technology CT8G4SFD824A.C16FADP 8GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMK32GX4M2E3200C16 16GB

Corsair CMK32GX4M2E3200C16 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Mushkin 99[2/7/4]197F 8GB

Mushkin 99[2/7/4]197F 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

A-DATA Technology AO2P24HCST2-BW8S 16GB

A-DATA Technology AO2P24HCST2-BW8S 16GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Micron Technology 16GB 2133MHz DIMM 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB

Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

G Skill Intl F4-3300C16-8GTZKW 8GB

G Skill Intl F4-3300C16-8GTZKW 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Panram International Corporation W4U2666PS-8GC19 8GB

Panram International Corporation W4U2666PS-8GC19 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Kingston 9905701-022.A00G 16GB

Kingston 9905701-022.A00G 16GB