SK Hynix HMT425S6CFR6A-PB 2GB vs Micron Technology 18ASF1G72PDZ-2G3B1 8GB

总分

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

差异规格评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB

需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB

报告一个错误

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G3B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 41

左右 -28% 更低的延时
更快的读取速度，GB/s

11.3 10.1

测试中的平均数值
更快的写入速度，GB/s

9.6 7.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT425S6CFR6A-PB 2GB

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 32
读取速度，GB/s

10.1 11.3
写入速度，GB/s

7.1 9.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1484 2395

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT425S6CFR6A-PB 2GB

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Micron Technology 18ASF1G72PDZ-2G3B1 8GB

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Kingston 99U5704-001.A00G 4GB

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Micron Technology 18ASF1G72PZ-2G3B1 8GB

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Lexar Co Limited LD4AS016G-H3200GST 16GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Wilk Elektronik S.A. GR2400S464L17S/8G 8GB

Wilk Elektronik S.A. GR2400S464L17S/8G 8GB