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SK Hynix HMT425S6CFR6A-PB 2GB
Mushkin MR[A/B]4U300JJJM8G 8GB

SK Hynix HMT425S6CFR6A-PB 2GB vs Mushkin MR[A/B]4U300JJJM8G 8GB

总分
star star star star star
SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分
star star star star star
Mushkin MR[A/B]4U300JJJM8G 8GB

Mushkin MR[A/B]4U300JJJM8G 8GB

差异 规格 评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB 需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB
报告一个错误
Mushkin MR[A/B]4U300JJJM8G 8GB 需要考虑的原因
Mushkin MR[A/B]4U300JJJM8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 41
    左右 -86% 更低的延时
  • 更快的读取速度，GB/s
    18.1 left arrow 10.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT425S6CFR6A-PB 2GB
Mushkin MR[A/B]4U300JJJM8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 22
  • 读取速度，GB/s
    10.1 left arrow 18.1
  • 写入速度，GB/s
    7.1 left arrow 13.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1484 left arrow 3254

SK Hynix HMT425S6CFR6A-PB 2GB RAM的比较

Ramaxel Technology RMT3170MP68F9F1600 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB

Mushkin MR[A/B]4U300JJJM8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 9965589-013.A00G 8GB
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内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Mushkin MR[A/B]4U300JJJM8G 8GB
Mushkin MR[A/B]4U300JJJM8G 8GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
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内存RAM
Corsair CMY8GX3M2A2666C10 4GB
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
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内存RAM
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内存RAM
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Kingston 9905702-136.A00G 8GB
内存RAM
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Samsung M4 70T2953EZ3-CE6 1GB
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内存RAM
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内存RAM
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Kingston 9905701-021.A00G 16GB
内存RAM
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Samsung M3 78T3354BZ0-CCC 256MB
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