SK Hynix HMT42GR7AFR4A-PB 16GB vs Gloway International Co. Ltd. TYP4U3200E16082C 8GB

总分

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

总分

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

差异规格评论

差异

SK Hynix HMT42GR7AFR4A-PB 16GB

需要考虑的原因
SK Hynix HMT42GR7AFR4A-PB 16GB

报告一个错误

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

需要考虑的原因
Gloway International Co. Ltd. TYP4U3200E16082C 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 42

左右 -8% 更低的延时
更快的读取速度，GB/s

17.5 11.7

测试中的平均数值
更快的写入速度，GB/s

10.6 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT42GR7AFR4A-PB 16GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 39
读取速度，GB/s

11.7 17.5
写入速度，GB/s

8.0 10.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2535 2600

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

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最新比较

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Samsung 1600 CL10 Series 8GB

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Maxsun MSD44G24Q0 4GB

Maxsun MSD44G24Q0 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

AMD R748G2400U2S-UO 8GB

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Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

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G Skill Intl F4-2400C17-8GNT 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

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G Skill Intl F4-3600C14-16GVK 16GB