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SK Hynix HMT42GR7AFR4A-PB 16GB
Kingston KY7N41-MIE 8GB

SK Hynix HMT42GR7AFR4A-PB 16GB vs Kingston KY7N41-MIE 8GB

总分
star star star star star
SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

总分
star star star star star
Kingston KY7N41-MIE 8GB

Kingston KY7N41-MIE 8GB

差异 规格 评论

差异

SK Hynix HMT42GR7AFR4A-PB 16GB 需要考虑的原因
SK Hynix HMT42GR7AFR4A-PB 16GB
报告一个错误
Kingston KY7N41-MIE 8GB 需要考虑的原因
Kingston KY7N41-MIE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 42
    左右 -27% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT42GR7AFR4A-PB 16GB
Kingston KY7N41-MIE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 33
  • 读取速度，GB/s
    11.7 left arrow 16.2
  • 写入速度，GB/s
    8.0 left arrow 12.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2535 left arrow 2948

SK Hynix HMT42GR7AFR4A-PB 16GB RAM的比较

SK Hynix HMT42GR7BFR4A-PB 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Kingston KY7N41-MIE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Kingston KY7N41-MIE 8GB
Kingston KY7N41-MIE 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Corsair CM4X8GF2400C14K4 8GB
Corsair CM4X8GF2400C14K4 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Maxsun MSD416G26Q3 16GB
Maxsun MSD416G26Q3 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston KHYXPX-MID 8GB
Kingston KHYXPX-MID 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
A-DATA Technology AE4S240038G17-BHYA 8GB
A-DATA Technology AE4S240038G17-BHYA 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
内存RAM
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
Samsung M471A1G44BB0-CWE 8GB
Samsung M471A1G44BB0-CWE 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston MSI24D4S7D8MH-16 16GB
Kingston MSI24D4S7D8MH-16 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology CB8GU2400.C8JT 8GB
Crucial Technology CB8GU2400.C8JT 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Kingston 9905624-044.A00G 8GB
Kingston 9905624-044.A00G 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
内存RAM