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SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix GKE160UD102408-2133 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB vs SK Hynix GKE160UD102408-2133 16GB

总分
star star star star star
SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

总分
star star star star star
SK Hynix GKE160UD102408-2133 16GB

SK Hynix GKE160UD102408-2133 16GB

差异 规格 评论

差异

SK Hynix HMT42GR7AFR4A-PB 16GB 需要考虑的原因
SK Hynix HMT42GR7AFR4A-PB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 78
    左右 46% 更低的延时
  • 更快的写入速度，GB/s
    8.0 left arrow 6.4
    测试中的平均数值
SK Hynix GKE160UD102408-2133 16GB 需要考虑的原因
SK Hynix GKE160UD102408-2133 16GB
报告一个错误
  • 更快的读取速度，GB/s
    13.1 left arrow 11.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix GKE160UD102408-2133 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 78
  • 读取速度，GB/s
    11.7 left arrow 13.1
  • 写入速度，GB/s
    8.0 left arrow 6.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2535 left arrow 1584

SK Hynix HMT42GR7AFR4A-PB 16GB RAM的比较

SK Hynix HMT42GR7BFR4A-PB 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

SK Hynix GKE160UD102408-2133 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix GKE160UD102408-2133 16GB
SK Hynix GKE160UD102408-2133 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Samsung M393A2K40BB1-CRC 16GB
Samsung M393A2K40BB1-CRC 16GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
V-Color Technology Inc. TN48G24S817-VHA/R 8GB
V-Color Technology Inc. TN48G24S817-VHA/R 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
SK Hynix HMA451U7MFR8N-TF 4GB
SK Hynix HMA451U7MFR8N-TF 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Samsung M391A2K43BB1-CPB 16GB
Samsung M391A2K43BB1-CPB 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston 9905702-029.A00G 8GB
Kingston 9905702-029.A00G 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology BLS8G4D30BESBK.8FD 8GB
Crucial Technology BLS8G4D30BESBK.8FD 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Corsair CMT64GX4M4K3600C16 16GB
Corsair CMT64GX4M4K3600C16 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Samsung M378A2K43BB1-CRC 16GB
Samsung M378A2K43BB1-CRC 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3000C14-8GVR 8GB
G Skill Intl F4-3000C14-8GVR 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL8G32C16U4R.M8FE 8GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
内存RAM
Kingston 99U5584-018.A00LF 4GB
Kingston 99U5584-018.A00LF 4GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-2400C14-16GRK 16GB
G Skill Intl F4-2400C14-16GRK 16GB
内存RAM