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SK Hynix HMT42GR7AFR4C-RD 16GB
G Skill Intl F4-2800C14-16GTZ 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB vs G Skill Intl F4-2800C14-16GTZ 16GB

总分
star star star star star
SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

总分
star star star star star
G Skill Intl F4-2800C14-16GTZ 16GB

G Skill Intl F4-2800C14-16GTZ 16GB

差异 规格 评论

差异

SK Hynix HMT42GR7AFR4C-RD 16GB 需要考虑的原因
SK Hynix HMT42GR7AFR4C-RD 16GB
报告一个错误
G Skill Intl F4-2800C14-16GTZ 16GB 需要考虑的原因
G Skill Intl F4-2800C14-16GTZ 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 52
    左右 -37% 更低的延时
  • 更快的读取速度，GB/s
    13.8 left arrow 9.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.2 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 14900
    左右 1.14 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT42GR7AFR4C-RD 16GB
G Skill Intl F4-2800C14-16GTZ 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 38
  • 读取速度，GB/s
    9.9 left arrow 13.8
  • 写入速度，GB/s
    8.2 left arrow 10.2
  • 内存带宽，mbps
    14900 left arrow 17000
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2285 left arrow 2841

SK Hynix HMT42GR7AFR4C-RD 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB

G Skill Intl F4-2800C14-16GTZ 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
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Corsair CMK64GX4M8X4200C19 8GB
内存RAM
SK Hynix HMT42GR7AFR4C-RD 16GB
SK Hynix HMT42GR7AFR4C-RD 16GB
G Skill Intl F4-2800C14-16GTZ 16GB
G Skill Intl F4-2800C14-16GTZ 16GB
内存RAM
Micron Technology 18ASF2G72PZ-2G3B1 16GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
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Micron Technology 18ASF2G72PDZ-2G3B1 16GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
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内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Transcend Information JM2666HSB-16G 16GB
Transcend Information JM2666HSB-16G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
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Kingston 9905678-105.A00G 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston 9905713-030.A00G 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
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Crucial Technology BLM8G40C18U4B.M8FE1 8GB
内存RAM
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Patriot Memory (PDP Systems) PSD22G6672 2GB
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内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
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G Skill Intl F4-2400C16-8GIS 8GB
内存RAM
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SK Hynix HYMP112U64CP8-S5 1GB
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内存RAM
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Smart Modular SH5641G8FJ8NWRNSQG 8GB
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Kingston 9965669-032.A00G 16GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Avant Technology J641GU48J5213NG 8GB
Avant Technology J641GU48J5213NG 8GB
内存RAM