SK Hynix HMT451S6AFR8A-PB 4GB vs A-DATA Technology AD73I1C1674EV 4GB

总分

SK Hynix HMT451S6AFR8A-PB 4GB

SK Hynix HMT451S6AFR8A-PB 4GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

差异规格评论

差异

SK Hynix HMT451S6AFR8A-PB 4GB

需要考虑的原因
SK Hynix HMT451S6AFR8A-PB 4GB

报告一个错误

更快的读取速度，GB/s

12.3 11.3

测试中的平均数值
更快的写入速度，GB/s

7.9 7.5

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 44

左右 -10% 更低的延时

规格

完整的技术规格清单

SK Hynix HMT451S6AFR8A-PB 4GB

A-DATA Technology AD73I1C1674EV 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

44 40
读取速度，GB/s

12.3 11.3
写入速度，GB/s

7.9 7.5
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2022 1654

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5173EB0-CK0 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Corsair CMK128GX4M4E3200C16 32GB

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Golden Empire CL16-18-18 D4-3400 4GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Corsair CMK64GX4M4C3000C15 16GB

Corsair CMK64GX4M4C3000C15 16GB

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Samsung M393B1G70BH0-CK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

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Kingston KHX1600C9D3/8G 8GB

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Crucial Technology BL4G24C16U4B.8FE 4GB

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Crucial Technology BL8G36C16U4W.M8FE1 8GB

Crucial Technology BL8G36C16U4W.M8FE1 8GB