SK Hynix HMT451U7BFR8C-RD 4GB vs G Skill Intl F4-3600C19-8GVRB 8GB

总分

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

总分

G Skill Intl F4-3600C19-8GVRB 8GB

G Skill Intl F4-3600C19-8GVRB 8GB

差异规格评论

差异

SK Hynix HMT451U7BFR8C-RD 4GB

需要考虑的原因
SK Hynix HMT451U7BFR8C-RD 4GB

报告一个错误

G Skill Intl F4-3600C19-8GVRB 8GB

需要考虑的原因
G Skill Intl F4-3600C19-8GVRB 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 42

左右 -50% 更低的延时
更快的读取速度，GB/s

19 12.8

测试中的平均数值
更快的写入速度，GB/s

15.6 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT451U7BFR8C-RD 4GB

G Skill Intl F4-3600C19-8GVRB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 28
读取速度，GB/s

12.8 19.0
写入速度，GB/s

9.0 15.6
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2269 3600

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMT451U7BFR8C-RD 4GB

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G Skill Intl F4-3600C19-8GVRB 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M393A2G40DB0-CPB 16GB

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Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

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Kingston KHX318C10FR/8G 8GB

G Skill Intl F4-3600C15-8GTZ 8GB

G Skill Intl F4-3600C15-8GTZ 8GB