RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMT451U7BFR8C-RD 4GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
比较
SK Hynix HMT451U7BFR8C-RD 4GB vs Micron Technology 36ASF2G72PZ-2G1A2 16GB
总分
SK Hynix HMT451U7BFR8C-RD 4GB
总分
Micron Technology 36ASF2G72PZ-2G1A2 16GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT451U7BFR8C-RD 4GB
报告一个错误
低于PassMark测试中的延时,ns
42
52
左右 19% 更低的延时
更快的读取速度,GB/s
12.8
10.2
测试中的平均数值
更快的写入速度,GB/s
9.0
8.2
测试中的平均数值
需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1A2 16GB
报告一个错误
更高的内存带宽,mbps
17500
14900
左右 1.17 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT451U7BFR8C-RD 4GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
52
读取速度,GB/s
12.8
10.2
写入速度,GB/s
9.0
8.2
内存带宽,mbps
14900
17500
Other
描述
PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13
PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
9-10-9-28 / 1866 MHz
no data
排名PassMark (越多越好)
2269
2319
SK Hynix HMT451U7BFR8C-RD 4GB RAM的比较
Kingston 99U5471-056.A00LF 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston ACR26D4S9S1KA-4 4GB
Kingston HP669238-071-HYC 4GB
Neo Forza GKE160SO204808-3200 16GB
Samsung M471B5673FH0-CF8 2GB
SK Hynix HMA41GR7BJR4N-UH 8GB
SK Hynix HMT451U7BFR8C-RD 4GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMU32GX4M4C3000C16 8GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-4000C18-8GTZKK 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4000C17-8GVKB 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3200C16-8GTZR 8GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-2133C15-4GIS 4GB
A-DATA Technology DDR2 800G 2GB
Hewlett-Packard 7EH64AA# 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Panram International Corporation R748G2133U2S 8GB
报告一个错误
×
Bug description
Source link