SK Hynix HYMP112S64CP6-S6 1GB vs Crucial Technology CT16G4DFD824A.C16FE 16GB

总分

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

总分

Crucial Technology CT16G4DFD824A.C16FE 16GB

Crucial Technology CT16G4DFD824A.C16FE 16GB

差异规格评论

差异

SK Hynix HYMP112S64CP6-S6 1GB

需要考虑的原因
SK Hynix HYMP112S64CP6-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 14.9

测试中的平均数值

Crucial Technology CT16G4DFD824A.C16FE 16GB

需要考虑的原因
Crucial Technology CT16G4DFD824A.C16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 65

左右 -91% 更低的延时
更快的写入速度，GB/s

11.4 1,711.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112S64CP6-S6 1GB

Crucial Technology CT16G4DFD824A.C16FE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 34
读取速度，GB/s

4,018.7 14.9
写入速度，GB/s

1,711.1 11.4
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

513 2831

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Crucial Technology CT8G4SFD824A.M16FB 8GB

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Kingston KF548C38-16 16GB

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Chun Well Technology Holding Limited D4U0830160B 8GB

Chun Well Technology Holding Limited D4U0830160B 8GB

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Patriot Memory (PDP Systems) PSD44G266682 4GB

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Samsung M471B1G73DB0-YK0 8GB

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Kingston 9905704-007.A00G 4GB

Kingston 9905704-007.A00G 4GB