SK Hynix HYMP112S64CP6-S6 1GB vs Micron Technology 4ATF51264AZ-3G2J1 4GB

总分

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

总分

Micron Technology 4ATF51264AZ-3G2J1 4GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

差异规格评论

差异

SK Hynix HYMP112S64CP6-S6 1GB

需要考虑的原因
SK Hynix HYMP112S64CP6-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 17.3

测试中的平均数值

Micron Technology 4ATF51264AZ-3G2J1 4GB

需要考虑的原因
Micron Technology 4ATF51264AZ-3G2J1 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 65

左右 -91% 更低的延时
更快的写入速度，GB/s

12.0 1,711.1

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112S64CP6-S6 1GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 34
读取速度，GB/s

4,018.7 17.3
写入速度，GB/s

1,711.1 12.0
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

513 2665

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Corsair CMD64GX4M4B3466C16 16GB

Corsair CMD64GX4M4B3466C16 16GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Mushkin MR[A/B]4U300JJJM8G 8GB

Mushkin MR[A/B]4U300JJJM8G 8GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology BLT4G4D30AETA.K8FD 4GB

Crucial Technology BLT4G4D30AETA.K8FD 4GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Team Group Inc. TEAMGROUP-UD4-3200 8GB

Team Group Inc. TEAMGROUP-UD4-3200 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

G Skill Intl F4-3000C16-8GRS 8GB

G Skill Intl F4-3000C16-8GRS 8GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Micron Technology AFLD44EK2P 4GB

Micron Technology AFLD44EK2P 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BL16G32C16U4BL.16FE 16GB

Crucial Technology BL16G32C16U4BL.16FE 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-2400C17-8GDBVR 8GB

G Skill Intl F4-2400C17-8GDBVR 8GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F4-3000C16-8GVRB 8GB

G Skill Intl F4-3000C16-8GVRB 8GB