SK Hynix HYMP112S64CP6-S6 1GB vs Micron Technology 8ATF2G64HZ-3G2E1 16GB

总分

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

总分

Micron Technology 8ATF2G64HZ-3G2E1 16GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

差异规格评论

差异

SK Hynix HYMP112S64CP6-S6 1GB

需要考虑的原因
SK Hynix HYMP112S64CP6-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 15.7

测试中的平均数值

Micron Technology 8ATF2G64HZ-3G2E1 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E1 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 65

左右 -86% 更低的延时
更快的写入速度，GB/s

12.1 1,711.1

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112S64CP6-S6 1GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 35
读取速度，GB/s

4,018.7 15.7
写入速度，GB/s

1,711.1 12.1
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

513 3045

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Transcend Information TS2GLH64V4B 16GB

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Essencore Limited KD48GS88A-26N1600 8GB

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Team Group Inc. TEAMGROUP-UD4-2133 8GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

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G Skill Intl F4-4000C19-16GTRS 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Crucial Technology CT4G4SFS8213.C8FHP 4GB

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SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

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SK Hynix HYMP125U64CP8-S6 2GB

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Golden Empire CL15-15-15 D4-2400 4GB