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SK Hynix HYMP112U64CP8-S5 1GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
比较
SK Hynix HYMP112U64CP8-S5 1GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
总分
SK Hynix HYMP112U64CP8-S5 1GB
总分
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB
报告一个错误
更快的读取速度,GB/s
2
16.9
测试中的平均数值
更快的写入速度,GB/s
2,978.2
13.4
测试中的平均数值
需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
66
左右 -120% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
SK Hynix HYMP112U64CP8-S5 1GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
66
30
读取速度,GB/s
2,929.1
16.9
写入速度,GB/s
2,978.2
13.4
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
511
3257
SK Hynix HYMP112U64CP8-S5 1GB RAM的比较
OCZ OCZ2SOE800URB1G 1GB
Kingston 9905295-025.B00LF 1GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB RAM的比较
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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SK Hynix HYMP112U64CP8-S5 1GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000
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Kingston 9965640-004.C00G 16GB
Samsung M393B1K70CH0-CH9 8GB
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PNY Electronics PNY 2GB
Corsair CMV4GX4M1A2133C15 4GB
Samsung M393B1G70BH0-CK0 8GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Corsair CMK32GX4M2E3200C16 16GB
Corsair CMK32GX5M2A4800C40 16GB
Kingston K531R8-MIN 4GB
Kingston 99U5702-025.A00G 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Kingston 9905624-046.A00G 8GB
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Samsung M378A2K43BB1-CPB 16GB
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