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SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology BL4G24C16U4B.8FB 4GB

SK Hynix HYMP112U64CP8-S5 1GB vs Crucial Technology BL4G24C16U4B.8FB 4GB

总分
star star star star star
SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分
star star star star star
Crucial Technology BL4G24C16U4B.8FB 4GB

Crucial Technology BL4G24C16U4B.8FB 4GB

差异 规格 评论

差异

SK Hynix HYMP112U64CP8-S5 1GB 需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,978.2 left arrow 13.1
    测试中的平均数值
Crucial Technology BL4G24C16U4B.8FB 4GB 需要考虑的原因
Crucial Technology BL4G24C16U4B.8FB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 66
    左右 -128% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology BL4G24C16U4B.8FB 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 29
  • 读取速度，GB/s
    2,929.1 left arrow 16.5
  • 写入速度，GB/s
    2,978.2 left arrow 13.1
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    511 left arrow 2983

SK Hynix HYMP112U64CP8-S5 1GB RAM的比较

OCZ OCZ2SOE800URB1G 1GB
Kingston 9905295-025.B00LF 1GB

Crucial Technology BL4G24C16U4B.8FB 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Dust Leopard DDR4-2400 C16 8GB 8GB
Dust Leopard DDR4-2400 C16 8GB 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Chun Well Technology Holding Limited D4U0836181B 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CM4B8G2J2666A15D 8GB
Corsair CM4B8G2J2666A15D 8GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMK32GX4M1A2666C16 32GB
Corsair CMK32GX4M1A2666C16 32GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CMK32GX4M2E3200C16 16GB
Corsair CMK32GX4M2E3200C16 16GB
内存RAM
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Chun Well Technology Holding Limited D4U0836181B 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB
内存RAM
SpecTek Incorporated PSD34G13332 4GB
SpecTek Incorporated PSD34G13332 4GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
G Skill Intl F4-3600C17-4GTZ 4GB
G Skill Intl F4-3600C17-4GTZ 4GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Samsung M393A2G40EB1-CPB 16GB
Samsung M393A2G40EB1-CPB 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston K000MD44U 4GB
Kingston K000MD44U 4GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
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Corsair CMT32GX4M4C3600C18 8GB
内存RAM