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SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3600C19-8GVSB 8GB

SK Hynix HYMP112U64CP8-S5 1GB vs G Skill Intl F4-3600C19-8GVSB 8GB

总分
star star star star star
SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分
star star star star star
G Skill Intl F4-3600C19-8GVSB 8GB

G Skill Intl F4-3600C19-8GVSB 8GB

差异 规格 评论

差异

SK Hynix HYMP112U64CP8-S5 1GB 需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 19.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,978.2 left arrow 17.8
    测试中的平均数值
G Skill Intl F4-3600C19-8GVSB 8GB 需要考虑的原因
G Skill Intl F4-3600C19-8GVSB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 66
    左右 -113% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3600C19-8GVSB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 31
  • 读取速度，GB/s
    2,929.1 left arrow 19.2
  • 写入速度，GB/s
    2,978.2 left arrow 17.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    511 left arrow 3895

SK Hynix HYMP112U64CP8-S5 1GB RAM的比较

OCZ OCZ2SOE800URB1G 1GB
Kingston 9905295-025.B00LF 1GB

G Skill Intl F4-3600C19-8GVSB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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G Skill Intl F4-3466C16-8GTZ 8GB
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Kingston ACR128X64D2S800C6 1GB
Kingston ACR128X64D2S800C6 1GB
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Crucial Technology BLE16G4D32AEEA.K16FB 16GB
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Samsung DDR3 8GB 1600MHz 8GB
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Crucial Technology BL16G32C16U4B.M16FE 16GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Mushkin MR[A/B]4U266GHHF8G 8GB
内存RAM
Kingston HX426C16FB2/8-SP 8GB
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Samsung M378A1G43TB1-CTD 8GB
内存RAM
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内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
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Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
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Kingston KHX2133C14S4/8G 8GB
内存RAM
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Samsung M471B5173QH0-YK0 4GB
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Micron Technology AFLD48VH1P 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
内存RAM
Apacer Technology 75.A73AA.G03 2GB
Apacer Technology 75.A73AA.G03 2GB
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Corsair CMR128GX4M8C3000C16 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
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Crucial Technology CT8G4DFS8213.C8FBD1 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
内存RAM