RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HYMP112U64CP8-S5 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
比较
SK Hynix HYMP112U64CP8-S5 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
总分
SK Hynix HYMP112U64CP8-S5 1GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB
报告一个错误
更快的读取速度,GB/s
2
14.6
测试中的平均数值
更快的写入速度,GB/s
2,978.2
10.5
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
66
左右 -144% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
SK Hynix HYMP112U64CP8-S5 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
66
27
读取速度,GB/s
2,929.1
14.6
写入速度,GB/s
2,978.2
10.5
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
511
2409
SK Hynix HYMP112U64CP8-S5 1GB RAM的比较
OCZ OCZ2SOE800URB1G 1GB
Kingston 9905295-025.B00LF 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB RAM的比较
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M4 70T2953EZ3-CE6 1GB
Golden Empire CL14-14-14 D4-2400 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-3600C16-8GTESC 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-4000C19-16GTRG 16GB
Kingston KHX2800C14D4/8GX 8GB
Corsair CMK32GX4M4B4000C19 8GB
Samsung M471B5173EB0-YK0 4GB
G Skill Intl F4-4266C19-4GTZ 4GB
AMD AE34G1601U1 4GB
DSL Memory D4SH1G081SH26A-C 8GB
Kingston 9965525-018.A00LF 4GB
Kingston ACR26D4U9D8ME-16 16GB
Kingston 99U5595-005.A00LF 2GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Kingston HP669238-071-HYC 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Elpida EBJ21UE8BDF0-DJ-F 2GB
G Skill Intl F4-4400C18-8GTRG 8GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
报告一个错误
×
Bug description
Source link