SK Hynix HYMP112U64CP8-S5 1GB vs InnoDisk Corporation M4C0-AGS1TCIK 16GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

InnoDisk Corporation M4C0-AGS1TCIK 16GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的读取速度，GB/s

2 18.3

测试中的平均数值
更快的写入速度，GB/s

2,978.2 14.9

测试中的平均数值

InnoDisk Corporation M4C0-AGS1TCIK 16GB

需要考虑的原因
InnoDisk Corporation M4C0-AGS1TCIK 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 66

左右 -106% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 32
读取速度，GB/s

2,929.1 18.3
写入速度，GB/s

2,978.2 14.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

511 3149

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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InnoDisk Corporation M4C0-AGS1TCIK 16GB

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Samsung M471B5273DH0-CH9 4GB

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A-DATA Technology DQKD1A08 1GB

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Crucial Technology CT4G4SFS8213.C8FBR2 4GB

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Samsung M378B5773DH0-CH9 2GB

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Corsair CM4X8GF2400C14K4 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Crucial Technology BL16G26C16U4W.16FD 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Transcend Information JM2666HSB-16G 16GB

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Samsung M3 78T2953EZ3-CF7 1GB

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