SK Hynix HYMP112U64CP8-S5 1GB vs Micron Technology 16ATF2G64AZ-2G6E1 16GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的读取速度，GB/s

2 15

测试中的平均数值
更快的写入速度，GB/s

2,978.2 12.5

测试中的平均数值

Micron Technology 16ATF2G64AZ-2G6E1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-2G6E1 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 66

左右 -74% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 38
读取速度，GB/s

2,929.1 15.0
写入速度，GB/s

2,978.2 12.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

511 3005

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung 1600 CL10 Series 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

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Kingston 99U5474-010.A00LF 2GB

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G Skill Intl F4-3466C16-8GTZ 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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G Skill Intl F4-3300C16-8GTZ 8GB

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Corsair CMK64GX4M4B3466C16 16GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

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Crucial Technology BL4G24C16U4B.8FB 4GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Chun Well Technology Holding Limited MD4U1632161DCW 16G