SK Hynix HYMP112U64CP8-S5 1GB vs Micron Technology 8ATF1G64AZ-2G6D1 8GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

Micron Technology 8ATF1G64AZ-2G6D1 8GB

Micron Technology 8ATF1G64AZ-2G6D1 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的读取速度，GB/s

2 15.3

测试中的平均数值

Micron Technology 8ATF1G64AZ-2G6D1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G6D1 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 66

左右 -214% 更低的延时
更快的写入速度，GB/s

7.0 2,978.2

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

Micron Technology 8ATF1G64AZ-2G6D1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 21
读取速度，GB/s

2,929.1 15.3
写入速度，GB/s

2,978.2 7.0
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

511 2276

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Mushkin MRA4S293MMMF32G 32GB

Mushkin MRA4S293MMMF32G 32GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Micron Technology 8ATF1G64AZ-2G6D1 8GB

Micron Technology 8ATF1G64AZ-2G6D1 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

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Kingston 9905403-444.A00LF 4GB

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Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Kingston 9905622-051.A00G 8GB

Kingston 9905622-051.A00G 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

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Crucial Technology BL16G36C16U4R.M16FE1 16GB

Crucial Technology BL16G36C16U4R.M16FE1 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Transcend Information TS512MSH64V1H 4GB

Transcend Information TS512MSH64V1H 4GB

Samsung M3 78T2863EHS-CF7 1GB

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OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Micron Technology ILG8GS2400A 8GB

Micron Technology ILG8GS2400A 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Mushkin MRA4S300GJJM16G 16GB

Mushkin MRA4S300GJJM16G 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Chun Well Technology Holding Limited D4U0830160B 8GB

Chun Well Technology Holding Limited D4U0830160B 8GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Kingston 9905744-062.A00G 32GB

Kingston 9905744-062.A00G 32GB