SK Hynix HYMP112U64CP8-S5 1GB vs Samsung M393A2G40DB0-CPB 16GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

Samsung M393A2G40DB0-CPB 16GB

Samsung M393A2G40DB0-CPB 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的读取速度，GB/s

2 10.3

测试中的平均数值

Samsung M393A2G40DB0-CPB 16GB

需要考虑的原因
Samsung M393A2G40DB0-CPB 16GB

报告一个错误

低于PassMark测试中的延时，ns

53 66

左右 -25% 更低的延时
更快的写入速度，GB/s

8.1 2,978.2

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

Samsung M393A2G40DB0-CPB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 53
读取速度，GB/s

2,929.1 10.3
写入速度，GB/s

2,978.2 8.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

511 2333

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK32GX4M4C3000C16 8GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Mushkin MR[A/B]4U266GHHF16G 16GB

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G Skill Intl F4-3200C16-8GVSB 8GB

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Kingston 9965525-140.A00LF 8GB

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Crucial Technology CT4G4SFS8213.C8FBR2 4GB

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Samsung M3 78T2863EHS-CF7 1GB

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Kingston KP4T2F-PSB 4GB

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Kingston 99U5702-101.A00G 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Apacer Technology 78.CAGP7.DFW0C 8GB

Apacer Technology 78.CAGP7.DFW0C 8GB

Kingston 99U5471-030.A00LF 8GB

Kingston 99U5471-030.A00LF 8GB

Samsung M393A4K40CB1-CRC 32GB

Samsung M393A4K40CB1-CRC 32GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-2666C19-8GNT 8GB

G Skill Intl F4-2666C19-8GNT 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Corsair CMW64GX4M4D3600C18 16GB

Corsair CMW64GX4M4D3600C18 16GB