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SK Hynix HYMP112U64CP8-S5 1GB
Samsung M471A2G43AB2-CWE 16GB

SK Hynix HYMP112U64CP8-S5 1GB vs Samsung M471A2G43AB2-CWE 16GB

总分
star star star star star
SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分
star star star star star
Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

差异 规格 评论

差异

SK Hynix HYMP112U64CP8-S5 1GB 需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,978.2 left arrow 12.8
    测试中的平均数值
Samsung M471A2G43AB2-CWE 16GB 需要考虑的原因
Samsung M471A2G43AB2-CWE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 66
    左右 -43% 更低的延时
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP112U64CP8-S5 1GB
Samsung M471A2G43AB2-CWE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 46
  • 读取速度，GB/s
    2,929.1 left arrow 15.9
  • 写入速度，GB/s
    2,978.2 left arrow 12.8
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    511 left arrow 2936

SK Hynix HYMP112U64CP8-S5 1GB RAM的比较

OCZ OCZ2SOE800URB1G 1GB
Kingston 9905295-025.B00LF 1GB

Samsung M471A2G43AB2-CWE 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 9965662-016.A00G 16GB
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Micron Technology 16ATF1G64AZ-2G1B1 8GB
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Patriot Memory (PDP Systems) PSD34G16002 4GB
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Kingmax Semiconductor GZOH23F-18---------- 16GB
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G Skill Intl F3-14900CL8-4GBXM 4GB
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内存RAM
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内存RAM
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SK Hynix HMT325S6CFR8C-PB 2GB
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