SK Hynix HYMP112U64CP8-S5 1GB vs Samsung V-GeN D4S8GL32A8TL 8GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

Samsung V-GeN D4S8GL32A8TL 8GB

Samsung V-GeN D4S8GL32A8TL 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的读取速度，GB/s

2 16.8

测试中的平均数值

Samsung V-GeN D4S8GL32A8TL 8GB

需要考虑的原因
Samsung V-GeN D4S8GL32A8TL 8GB

报告一个错误

低于PassMark测试中的延时，ns

64 66

左右 -3% 更低的延时
更快的写入速度，GB/s

8.3 2,978.2

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

Samsung V-GeN D4S8GL32A8TL 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 64
读取速度，GB/s

2,929.1 16.8
写入速度，GB/s

2,978.2 8.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

511 2052

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMX4GX3M1A1333C9 4GB

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Micron Technology 8ATF2G64HZ-2G3A1 16GB

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G Skill Intl F3-2666C12-8GTXD 8GB

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Smart Modular SMS4WEC8C1K0446FCG 8GB

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Kingston 99U5471-012.A00LF 4GB

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Essencore Limited IM48GU48N24-FFFHM 8GB

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Kingston KHX2400C11D3/4GX 4GB

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Kingston 9965596-035.B00G 4GB

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G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

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Kingston 9965525-140.A00LF 8GB

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Crucial Technology CT16G4DFD8266.M16FD 16GB

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G Skill Intl F4-3200C15-16GTZR 16GB

G Skill Intl F4-3200C15-16GTZR 16GB

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SpecTek Incorporated ?????????????????? 2GB

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Samsung M393B5270CH0-CH9 4GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

Samsung M3 93T5750CZA-CE6 2GB

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Corsair CMK16GX4M2K4266C16 8GB

Corsair CMK16GX4M2K4266C16 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3200C22-32GRS 32GB

G Skill Intl F4-3200C22-32GRS 32GB