SK Hynix HYMP112U64CP8-S6 1GB vs Corsair CM4X8GD3000C15K4 8GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Corsair CM4X8GD3000C15K4 8GB

Corsair CM4X8GD3000C15K4 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 18.6

测试中的平均数值
更快的写入速度，GB/s

2,076.1 14.4

测试中的平均数值

Corsair CM4X8GD3000C15K4 8GB

需要考虑的原因
Corsair CM4X8GD3000C15K4 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 59

左右 -111% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Corsair CM4X8GD3000C15K4 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 28
读取速度，GB/s

4,723.5 18.6
写入速度，GB/s

2,076.1 14.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

741 3469

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Kingston KVR16N11/8-SP 8GB

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Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Apacer Technology 78.C1GM3.C7W0B 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Micron Technology 36ASF4G72PZ-2G6H1 32GB

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Kingston 9905702-019.A00G 8GB

Kingston 9905702-019.A00G 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-2933C16-8GTZRX 8GB

G Skill Intl F4-2933C16-8GTZRX 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Corsair CMH32GX4M2E3200C16 16GB

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Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Essencore Limited KD4AGU880-34A170X 16GB

Essencore Limited KD4AGU880-34A170X 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Cortus SAS 8ATF51264AZ-2G1A1 4GB

Cortus SAS 8ATF51264AZ-2G1A1 4GB