SK Hynix HYMP112U64CP8-S6 1GB vs Crucial Technology CT16G4SFD824A.M16FH 16GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Crucial Technology CT16G4SFD824A.M16FH 16GB

Crucial Technology CT16G4SFD824A.M16FH 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 14.9

测试中的平均数值

Crucial Technology CT16G4SFD824A.M16FH 16GB

需要考虑的原因
Crucial Technology CT16G4SFD824A.M16FH 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 59

左右 -64% 更低的延时
更快的写入速度，GB/s

9.8 2,076.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Crucial Technology CT16G4SFD824A.M16FH 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 36
读取速度，GB/s

4,723.5 14.9
写入速度，GB/s

2,076.1 9.8
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

741 2473

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Crucial Technology BLS8G4S26BFSDK.8FBD 8GB

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Kingston ACR256X64D3S1333C9 2GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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V-GEN D4H8GS24A8 8GB

V-GEN D4H8GS24A8 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Smart Modular SF4641G8CK8IEHLSBG 8GB

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G Skill Intl F4-3600C18-8GTZN 8GB

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

G Skill Intl F4-3200C15-8GTZKY 8GB

G Skill Intl F4-3200C15-8GTZKY 8GB