SK Hynix HYMP112U64CP8-S6 1GB vs G Skill Intl F4-3333C16-8GTZ 8GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

G Skill Intl F4-3333C16-8GTZ 8GB

G Skill Intl F4-3333C16-8GTZ 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 21.2

测试中的平均数值
更快的写入速度，GB/s

2,076.1 17.2

测试中的平均数值

G Skill Intl F4-3333C16-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3333C16-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 59

左右 -157% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

G Skill Intl F4-3333C16-8GTZ 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 23
读取速度，GB/s

4,723.5 21.2
写入速度，GB/s

2,076.1 17.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

741 4043

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A5143EB1-CPB 4GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

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Corsair CMK8GX4M2B4266C19 4GB

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Micron Technology 16ATF2G64HZ-2G1A1 16GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

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Kingston XF875V-HYA 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

SK Hynix HMA82GU6DJR8N-XN 16GB

SK Hynix HMA82GU6DJR8N-XN 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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Kingston 99U5663-003.A00G 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

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Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB