SK Hynix HYMP112U64CP8-S6 1GB vs Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 16.4

测试中的平均数值
更快的写入速度，GB/s

2,076.1 13.2

测试中的平均数值

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 59

左右 -119% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 27
读取速度，GB/s

4,723.5 16.4
写入速度，GB/s

2,076.1 13.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

741 3033

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3200C16-16GSXKB 16GB

G Skill Intl F4-3200C16-16GSXKB 16GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Crucial Technology CT8G4DFD8213.C16FAR2 8GB

Crucial Technology CT8G4DFD8213.C16FAR2 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Kingston KHX2666C16D4/4G 4GB

Kingston KHX2666C16D4/4G 4GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Panram International Corporation W4U2400PS-4G 4GB

Panram International Corporation W4U2400PS-4G 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-3400C16-4GRBD 4GB

G Skill Intl F4-3400C16-4GRBD 4GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Samsung M391A1G43EB1-CRC 8GB

Samsung M391A1G43EB1-CRC 8GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Crucial Technology CT32G4DFD8266.M16FB 32GB

Crucial Technology CT32G4DFD8266.M16FB 32GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

G Skill Intl F4-2133C15-4GRB 4GB

G Skill Intl F4-2133C15-4GRB 4GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Patriot Memory (PDP Systems) PSD48G266681S 8GB

Patriot Memory (PDP Systems) PSD48G266681S 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3200C15-16GTZ 16GB

G Skill Intl F4-3200C15-16GTZ 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-3200C16-16GTZA 16GB

G Skill Intl F4-3200C16-16GTZA 16GB