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SK Hynix HYMP112U64CP8-S6 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

SK Hynix HYMP112U64CP8-S6 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

总分
star star star star star
SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

差异 规格 评论

差异

SK Hynix HYMP112U64CP8-S6 1GB 需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,076.1 left arrow 14.0
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 59
    左右 -127% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP112U64CP8-S6 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 26
  • 读取速度，GB/s
    4,723.5 left arrow 17.7
  • 写入速度，GB/s
    2,076.1 left arrow 14.0
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    741 left arrow 3017

SK Hynix HYMP112U64CP8-S6 1GB RAM的比较

SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP164U64CP6-Y5 512MB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB RAM的比较

Corsair CML16GX3M2A1600C10 8GB
Kingston ACR16D3LS1NGG/2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Corsair CMSX64GX4M2A2666C18 32GB
Corsair CMSX64GX4M2A2666C18 32GB
内存RAM
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Kingston MSI24D4S7D8MB-8 8GB
Kingston MSI24D4S7D8MB-8 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Apacer Technology 78.B1GM3.C7W0B 4GB
Apacer Technology 78.B1GM3.C7W0B 4GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-2400C17-8GDBVR 8GB
G Skill Intl F4-2400C17-8GDBVR 8GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Corsair CMK16GX4M2K4000C19 8GB
Corsair CMK16GX4M2K4000C19 8GB
内存RAM
SK Hynix HMT451U7BFR8C-RD 4GB
SK Hynix HMT451U7BFR8C-RD 4GB
Kingston XN205T-HYD2 16GB
Kingston XN205T-HYD2 16GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
G Skill Intl F4-3600C16-16GTZNC 16GB
G Skill Intl F4-3600C16-16GTZNC 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston 9965669-008.A03G 16GB
Kingston 9965669-008.A03G 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
King Tiger Technology Tigo-2400MHz-8G 8GB
King Tiger Technology Tigo-2400MHz-8G 8GB
内存RAM