SK Hynix HYMP112U64CP8-S6 1GB vs Lexar Co Limited LD4AS016G-H3200GST 16GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Lexar Co Limited LD4AS016G-H3200GST 16GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 16.6

测试中的平均数值
更快的写入速度，GB/s

2,076.1 14.2

测试中的平均数值

Lexar Co Limited LD4AS016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AS016G-H3200GST 16GB

报告一个错误

低于PassMark测试中的延时，ns

44 59

左右 -34% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 44
读取速度，GB/s

4,723.5 16.6
写入速度，GB/s

2,076.1 14.2
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

741 3146

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

G Skill Intl F4-4000C18-16GTRG 16GB

G Skill Intl F4-4000C18-16GTRG 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Samsung M47472K43DB1-CTD 16GB

Samsung M47472K43DB1-CTD 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kingston 9905624-004.A00G 4GB

Kingston 9905624-004.A00G 4GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

King Tiger Technology TMKG8G3000C17(XMP) 8GB

King Tiger Technology TMKG8G3000C17(XMP) 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology BL16G30C15U4B.M16FE1 16GB

Crucial Technology BL16G30C15U4B.M16FE1 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Apacer Technology 78.D2GF2.AU30B 16GB

Apacer Technology 78.D2GF2.AU30B 16GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

SK Hynix HMA451R7AFR8N-UH 4GB

SK Hynix HMA451R7AFR8N-UH 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Kingston 9905665-021.A00G 4GB

Kingston 9905665-021.A00G 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

OCMEMORY OCM2933CL16-16GBH 16GB

OCMEMORY OCM2933CL16-16GBH 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3600C16-32GVK 32GB

G Skill Intl F4-3600C16-32GVK 32GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CB8GU2400.C8ET 8GB

Crucial Technology CB8GU2400.C8ET 8GB