SK Hynix HYMP112U64CP8-S6 1GB vs Maxsun MSD416G26Q3 16GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Maxsun MSD416G26Q3 16GB

Maxsun MSD416G26Q3 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

低于PassMark测试中的延时，ns

59 84

左右 30% 更低的延时
更快的读取速度，GB/s

4 12.5

测试中的平均数值

Maxsun MSD416G26Q3 16GB

需要考虑的原因
Maxsun MSD416G26Q3 16GB

报告一个错误

更快的写入速度，GB/s

7.0 2,076.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Maxsun MSD416G26Q3 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 84
读取速度，GB/s

4,723.5 12.5
写入速度，GB/s

2,076.1 7.0
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

741 1486

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Maxsun MSD416G26Q3 16GB

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A-DATA Technology DOVF1B163G2G 2GB

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Corsair CMD8GX3M2A2933C12 4GB

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G Skill Intl F4-4000C18-32GTZN 32GB

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Kingston ACR26D4S9S1ME-4 4GB

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Mushkin 996902 2GB

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Kingston 9905665-014.A00G 4GB

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Samsung M391B5673EH1-CH9 2GB

Kingston X3XCFP-HYA 8GB

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Samsung M393B1G70BH0-YK0 8GB

SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

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Micron Technology 36ASF4G72PZ-2G6D1 32GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB