SK Hynix HYMP112U64CP8-S6 1GB vs Micron Technology 18ASF1G72PDZ-2G3B1 8GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 11.3

测试中的平均数值

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G3B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 59

左右 -84% 更低的延时
更快的写入速度，GB/s

9.6 2,076.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 32
读取速度，GB/s

4,723.5 11.3
写入速度，GB/s

2,076.1 9.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

741 2395

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2133C15-16GFT 16GB

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G Skill Intl F4-2400C16-4GFX 4GB

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Samsung M471B1G73QH0-YK0 8GB

Kingston KHX3600C18D4/32GX 32GB

Kingston KHX3600C18D4/32GX 32GB