SK Hynix HYMP112U64CP8-S6 1GB vs Samsung M393A2K43BB1-CRC 16GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Samsung M393A2K43BB1-CRC 16GB

Samsung M393A2K43BB1-CRC 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 10.4

测试中的平均数值

Samsung M393A2K43BB1-CRC 16GB

需要考虑的原因
Samsung M393A2K43BB1-CRC 16GB

报告一个错误

低于PassMark测试中的延时，ns

53 59

左右 -11% 更低的延时
更快的写入速度，GB/s

7.8 2,076.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Samsung M393A2K43BB1-CRC 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 53
读取速度，GB/s

4,723.5 10.4
写入速度，GB/s

2,076.1 7.8
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

741 2333

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA851S6DJR6N-VK 4GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Corsair CMG16GX4M2D3600C18 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Corsair CMD8GX3M2A2933C12 4GB

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Mushkin 991679ES 996679ES 2GB

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Kingston 99U5403-465.A00LF 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Kingston KHX2800C14D4/8GX 8GB

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A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB