SK Hynix HYMP112U64CP8-S6 1GB vs Samsung M471A2G43BB2-CWE 16GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Samsung M471A2G43BB2-CWE 16GB

Samsung M471A2G43BB2-CWE 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

低于PassMark测试中的延时，ns

59 60

左右 2% 更低的延时
更快的读取速度，GB/s

4 14.9

测试中的平均数值
更快的写入速度，GB/s

2,076.1 12.0

测试中的平均数值

Samsung M471A2G43BB2-CWE 16GB

需要考虑的原因
Samsung M471A2G43BB2-CWE 16GB

报告一个错误

更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Samsung M471A2G43BB2-CWE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 60
读取速度，GB/s

4,723.5 14.9
写入速度，GB/s

2,076.1 12.0
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

741 2511

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BD160B.C16F 4GB

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Samsung M393B4G70EMB-CK0 32GB

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Samsung M395T2863QZ4-CF76 1GB

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Samsung M3 93T5750CZA-CE6 2GB

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Essencore Limited KD4AGU88C-26N190A 16GB

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Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

SK Hynix HMA82GR7AFR4N-VK 16GB

SK Hynix HMA82GR7AFR4N-VK 16GB

Samsung M3 78T5663RZ3-CE6 2GB

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Kingston 9905622-055.A00G 4GB

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Netac Technology Co Ltd EKBLACK4163216AD 8GB

Netac Technology Co Ltd EKBLACK4163216AD 8GB

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Kingston 9905403-090.A01LF 4GB

Panram International Corporation PUD42400C154G4NJK 4GB

Panram International Corporation PUD42400C154G4NJK 4GB