SK Hynix HYMP112U64CP8-Y5 1GB vs A-DATA Technology AO1P32NC8T1-BCSS 8GB

总分

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

总分

A-DATA Technology AO1P32NC8T1-BCSS 8GB

A-DATA Technology AO1P32NC8T1-BCSS 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

4 17.6

测试中的平均数值

A-DATA Technology AO1P32NC8T1-BCSS 8GB

需要考虑的原因
A-DATA Technology AO1P32NC8T1-BCSS 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 62

左右 -59% 更低的延时
更快的写入速度，GB/s

13.9 1,658.4

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-Y5 1GB

A-DATA Technology AO1P32NC8T1-BCSS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 39
读取速度，GB/s

4,216.7 17.6
写入速度，GB/s

1,658.4 13.9
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

688 3046

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 9ASF51272PZ-2G3B1 4GB

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Corsair VS1GB800D2 1GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Kingston KHX2666C15/16GX 16GB

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Crucial Technology CT102464BA160B.M16 8GB

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InnoDisk Corporation M4C0-AGS1TCIK 16GB

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EVGA 8GX-D4-2800-MR 8GB

EVGA 8GX-D4-2800-MR 8GB

Kingston 9905403-090.A01LF 4GB

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Samsung M393A5143DB0-CPB 4GB

Samsung M393A5143DB0-CPB 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-4000C16-16GTZR 16GB

G Skill Intl F4-4000C16-16GTZR 16GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Samsung M393A1G43DB1-CRC 8GB

Samsung M393A1G43DB1-CRC 8GB