SK Hynix HYMP112U64CP8-Y5 1GB vs Teikon TMA851S6CJR6N-VKSC 4GB

总分

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

总分

Teikon TMA851S6CJR6N-VKSC 4GB

Teikon TMA851S6CJR6N-VKSC 4GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

4 17

测试中的平均数值

Teikon TMA851S6CJR6N-VKSC 4GB

需要考虑的原因
Teikon TMA851S6CJR6N-VKSC 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 62

左右 -130% 更低的延时
更快的写入速度，GB/s

12.2 1,658.4

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-Y5 1GB

Teikon TMA851S6CJR6N-VKSC 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 27
读取速度，GB/s

4,216.7 17.0
写入速度，GB/s

1,658.4 12.2
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

688 2379

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BL51264BA160A.16FH 4GB

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Samsung M4 70T2864QZ3-CF7 1GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Micron Technology 8ATF1G64HZ-2G3B2 8GB

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A-DATA Technology VDQVE1B16 2GB

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Samsung M3 78T2863EHS-CF7 1GB

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Patriot Memory (PDP Systems) PSD416G21332 16GB

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JUHOR JHD2666U1916JG 16GB

JUHOR JHD2666U1916JG 16GB

Corsair CMT32GX5M2B5600C36 16GB

Corsair CMT32GX5M2B5600C36 16GB

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

Kingston XJV223-MIE 16GB

Kingston XJV223-MIE 16GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Kingston HX424C15FB/16 16GB

Kingston HX424C15FB/16 16GB