RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HYMP125S64CP8-S6 2GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB

SK Hynix HYMP125S64CP8-S6 2GB vs Micron Technology 8R8F1G64HZ-2G3B1 8GB

总分
star star star star star
SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

总分
star star star star star
Micron Technology 8R8F1G64HZ-2G3B1 8GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

差异 规格 评论

差异

SK Hynix HYMP125S64CP8-S6 2GB 需要考虑的原因
SK Hynix HYMP125S64CP8-S6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.8
    测试中的平均数值
Micron Technology 8R8F1G64HZ-2G3B1 8GB 需要考虑的原因
Micron Technology 8R8F1G64HZ-2G3B1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 68
    左右 -143% 更低的延时
  • 更快的写入速度，GB/s
    6.8 left arrow 2,013.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP125S64CP8-S6 2GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 28
  • 读取速度，GB/s
    4,402.8 left arrow 14.8
  • 写入速度，GB/s
    2,013.5 left arrow 6.8
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    701 left arrow 2014

SK Hynix HYMP125S64CP8-S6 2GB RAM的比较

Kingston DDR2 PC800MHz 2GB
G Skill Intl F4-3200C15-16GTZSK 16GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-3600C16-16GTRS 16GB
G Skill Intl F4-3600C16-16GTRS 16GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Gloway International Co. Ltd. WAR4U2666D19081C 8GB
Gloway International Co. Ltd. WAR4U2666D19081C 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Samsung M471A2G43BB2-CWE 16GB
Samsung M471A2G43BB2-CWE 16GB
内存RAM
G Skill Intl F3-2400C10-8GTX 8GB
G Skill Intl F3-2400C10-8GTX 8GB
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
EVGA 16G-D4-2666-MR 4GB
EVGA 16G-D4-2666-MR 4GB
内存RAM
Kingston KHX1600C10D3/8GXF 8GB
Kingston KHX1600C10D3/8GXF 8GB
Samsung M471A5143DB0-CPB 4GB
Samsung M471A5143DB0-CPB 4GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
Corsair CMG16GX4M2E3200C16 8GB
Corsair CMG16GX4M2E3200C16 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3600C18-32GTRS 32GB
G Skill Intl F4-3600C18-32GTRS 32GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMG64GX4M2D3600C18 32GB
Corsair CMG64GX4M2D3600C18 32GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Crucial Technology BL8G30C15U4W.8FE 8GB
Crucial Technology BL8G30C15U4W.8FE 8GB
内存RAM