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SK Hynix HYMP125S64CP8-S6 2GB
Panram International Corporation PUD42400C154GNJW 4GB

SK Hynix HYMP125S64CP8-S6 2GB vs Panram International Corporation PUD42400C154GNJW 4GB

总分
star star star star star
SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

总分
star star star star star
Panram International Corporation PUD42400C154GNJW 4GB

Panram International Corporation PUD42400C154GNJW 4GB

差异 规格 评论

差异

SK Hynix HYMP125S64CP8-S6 2GB 需要考虑的原因
SK Hynix HYMP125S64CP8-S6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.7
    测试中的平均数值
Panram International Corporation PUD42400C154GNJW 4GB 需要考虑的原因
Panram International Corporation PUD42400C154GNJW 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 68
    左右 -152% 更低的延时
  • 更快的写入速度，GB/s
    8.7 left arrow 2,013.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP125S64CP8-S6 2GB
Panram International Corporation PUD42400C154GNJW 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 27
  • 读取速度，GB/s
    4,402.8 left arrow 13.7
  • 写入速度，GB/s
    2,013.5 left arrow 8.7
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    701 left arrow 2193

SK Hynix HYMP125S64CP8-S6 2GB RAM的比较

Kingston DDR2 PC800MHz 2GB
G Skill Intl F4-3200C15-16GTZSK 16GB

Panram International Corporation PUD42400C154GNJW 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 36ASF4G72LZ-2G3B1 32GB
Micron Technology 36ASF4G72LZ-2G3B1 32GB
内存RAM
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
Panram International Corporation PUD42400C154GNJW 4GB
Panram International Corporation PUD42400C154GNJW 4GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMW64GX4M8C3466C16 8GB
Corsair CMW64GX4M8C3466C16 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology CT16G4DFD8266.M16FD 16GB
Crucial Technology CT16G4DFD8266.M16FD 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
内存RAM
Kingston 99U5471-025.A00LF 4GB
Kingston 99U5471-025.A00LF 4GB
Samsung M471B5673FH0-CH9 2GB
Samsung M471B5673FH0-CH9 2GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Samsung M378A2K43DB1-CTD 16GB
Samsung M378A2K43DB1-CTD 16GB
内存RAM
Nanya Technology M2Y51264TU88A2B-3C 512MB
Nanya Technology M2Y51264TU88A2B-3C 512MB
Crucial Technology CT16G4SFD824A.M16FB 16GB
Crucial Technology CT16G4SFD824A.M16FB 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Apacer Technology GD2.1527CS.001 8GB
Apacer Technology GD2.1527CS.001 8GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
Apacer Technology 78.CAGP7.C7Z0B 8GB
Apacer Technology 78.CAGP7.C7Z0B 8GB
内存RAM
SK Hynix HMA81GS6JJR8N-VK 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
Corsair CMSX32GX4M2A2666C18 16GB
Corsair CMSX32GX4M2A2666C18 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Samsung M378A1K43BB2-CTD 8GB
Samsung M378A1K43BB2-CTD 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
内存RAM