SK Hynix HYMP125S64CP8-S6 2GB vs Panram International Corporation PUD42400C154GNJW 4GB

总分

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

总分

Panram International Corporation PUD42400C154GNJW 4GB

Panram International Corporation PUD42400C154GNJW 4GB

差异规格评论

差异

SK Hynix HYMP125S64CP8-S6 2GB

需要考虑的原因
SK Hynix HYMP125S64CP8-S6 2GB

报告一个错误

更快的读取速度，GB/s

4 13.7

测试中的平均数值

Panram International Corporation PUD42400C154GNJW 4GB

需要考虑的原因
Panram International Corporation PUD42400C154GNJW 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 68

左右 -152% 更低的延时
更快的写入速度，GB/s

8.7 2,013.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP125S64CP8-S6 2GB

Panram International Corporation PUD42400C154GNJW 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 27
读取速度，GB/s

4,402.8 13.7
写入速度，GB/s

2,013.5 8.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

701 2193

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Panram International Corporation PUD42400C154GNJW 4GB

Panram International Corporation PUD42400C154GNJW 4GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Crucial Technology CT16G4DFD8213.C16FBR 16GB

Crucial Technology CT16G4DFD8213.C16FBR 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

G Skill Intl F4-3600C16-32GTZR 32GB

G Skill Intl F4-3600C16-32GTZR 32GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Transcend Information JM3200HLB-16GK 8GB

Transcend Information JM3200HLB-16GK 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Samsung M393B2G70AH0-YH9 16GB

Samsung M393B2G70AH0-YH9 16GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Kingmax Semiconductor GSAH22F-18---------- 16GB

Kingmax Semiconductor GSAH22F-18---------- 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB

Ramaxel Technology RMSA3320KE78HAF-3200 8GB

Ramaxel Technology RMSA3320KE78HAF-3200 8GB

Kingston KF548C38-16 16GB

Kingston KF548C38-16 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Corsair CMT16GX4M2K4000C19 8GB

Corsair CMT16GX4M2K4000C19 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMK16GX4M2E4000C19 8GB

Corsair CMK16GX4M2E4000C19 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Asgard VMA41UF-MEC1U2BQ2 4GB

Asgard VMA41UF-MEC1U2BQ2 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Netac Technology Co Ltd EKBLACK4083016A 8GB

Netac Technology Co Ltd EKBLACK4083016A 8GB