SK Hynix HYMP164U64CP6-Y5 512MB vs Crucial Technology BLS8G4S26BFSDK.8FD 8GB

总分

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

总分

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

差异规格评论

差异

SK Hynix HYMP164U64CP6-Y5 512MB

需要考虑的原因
SK Hynix HYMP164U64CP6-Y5 512MB

报告一个错误

更快的读取速度，GB/s

14 11.7

测试中的平均数值

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

需要考虑的原因
Crucial Technology BLS8G4S26BFSDK.8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 44

左右 -7% 更低的延时
更快的写入速度，GB/s

9.5 8,883.4

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP164U64CP6-Y5 512MB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

44 41
读取速度，GB/s

14,740.4 11.7
写入速度，GB/s

8,883.4 9.5
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2811 2058

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMG32GX4M2D3600C18 16GB

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Kingston 99U5474-023.A00LF 4GB

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Patriot Memory (PDP Systems) 2800 C16 Series 8GB

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Samsung M471A2K43DB1-CWE 16GB

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G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Apacer Technology 76.C102G.D170B 8GB

Apacer Technology 76.C102G.D170B 8GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Avant Technology J644GU44J9266NQ 32GB

Avant Technology J644GU44J9266NQ 32GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

Kingmax Semiconductor FLGE85F-C8KL9A 2GB

Kingmax Semiconductor FLGE85F-C8KL9A 2GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244CB0-CRC 4GB