SK Hynix HYMP164U64CP6-Y5 512MB vs Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

总分

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

总分

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

差异规格评论

差异

SK Hynix HYMP164U64CP6-Y5 512MB

需要考虑的原因
SK Hynix HYMP164U64CP6-Y5 512MB

报告一个错误

更快的写入速度，GB/s

8,883.4 16.8

测试中的平均数值

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 44

左右 -69% 更低的延时
更快的读取速度，GB/s

18.7 14

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP164U64CP6-Y5 512MB

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

44 26
读取速度，GB/s

14,740.4 18.7
写入速度，GB/s

8,883.4 16.8
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2811 3937

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T2863EHS-CF7 1GB

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SK Hynix HYMP512S64CP8-Y5 1GB

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A-DATA Technology AD73I1B1672EG 2GB

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SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

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Samsung M378A2K43CB1-CTD 16GB

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Samsung M378B5673EH1-CF8 2GB

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Tanbassh 8G 2666MHZ 8GB

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Kingston KHX1600C9S3L/8G 8GB

Kingston 9905744-067.A00G 32GB

Kingston 9905744-067.A00G 32GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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G Skill Intl F4-2400C17-4GNT 4GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

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G Skill Intl F4-3200C16-8GTZN 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

G Skill Intl F4-4000C16-16GVK 16GB

G Skill Intl F4-4000C16-16GVK 16GB