SK Hynix HYMP164U64CP6-Y5 512MB vs Kingston XN205T-HYD2 16GB

总分

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

总分

Kingston XN205T-HYD2 16GB

Kingston XN205T-HYD2 16GB

差异规格评论

差异

SK Hynix HYMP164U64CP6-Y5 512MB

需要考虑的原因
SK Hynix HYMP164U64CP6-Y5 512MB

报告一个错误

更快的写入速度，GB/s

8,883.4 16.6

测试中的平均数值

Kingston XN205T-HYD2 16GB

需要考虑的原因
Kingston XN205T-HYD2 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 44

左右 -57% 更低的延时
更快的读取速度，GB/s

17.5 14

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP164U64CP6-Y5 512MB

Kingston XN205T-HYD2 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

44 28
读取速度，GB/s

14,740.4 17.5
写入速度，GB/s

8,883.4 16.6
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2811 3773

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology BLS8G4D240FSE.16FBD2 8GB

Crucial Technology BLS8G4D240FSE.16FBD2 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Kingston 9905713-028.A00G 8GB

Kingston 9905713-028.A00G 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Kingston KHX2133C13S4/8G 8GB

Kingston KHX2133C13S4/8G 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

G Skill Intl F4-3600C16-8GTZN 8GB

G Skill Intl F4-3600C16-8GTZN 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Good Wealth Technology Ltd. KETECH 8GB

Good Wealth Technology Ltd. KETECH 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Patriot Memory (PDP Systems) PSD48G213382 8GB

Patriot Memory (PDP Systems) PSD48G213382 8GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Kingston 9905624-023.A00G 8GB

Kingston 9905624-023.A00G 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB