SK Hynix HYMP164U64CP6-Y5 512MB vs Samsung M391A1G43DB0-CPB 8GB

总分

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

总分

Samsung M391A1G43DB0-CPB 8GB

Samsung M391A1G43DB0-CPB 8GB

差异规格评论

差异

SK Hynix HYMP164U64CP6-Y5 512MB

需要考虑的原因
SK Hynix HYMP164U64CP6-Y5 512MB

报告一个错误

更快的读取速度，GB/s

14 11.7

测试中的平均数值
更快的写入速度，GB/s

8,883.4 6.8

测试中的平均数值

Samsung M391A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M391A1G43DB0-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 44

左右 -42% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP164U64CP6-Y5 512MB

Samsung M391A1G43DB0-CPB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

44 31
读取速度，GB/s

14,740.4 11.7
写入速度，GB/s

8,883.4 6.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2811 1763

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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V-Color Technology Inc. TN48G26S819-SB 8GB

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Corsair CMD128GX4M8A2400C14 16GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

G Skill Intl F4-3200C16-8GVSB 8GB

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Samsung M3 78T2863QZS-CF7 1GB

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V-GEN D4S8GL30A8TS5 8GB

V-GEN D4S8GL30A8TS5 8GB

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

Mushkin 99[2/7/4]191F 4GB

Mushkin 99[2/7/4]191F 4GB