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SK Hynix HYMP31GF72CMP4D5Y5 8GB
A-DATA Technology DDR4 2400 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB vs A-DATA Technology DDR4 2400 16GB

总分
star star star star star
SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分
star star star star star
A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

差异 规格 评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB 需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,303.7 left arrow 11.5
    测试中的平均数值
A-DATA Technology DDR4 2400 16GB 需要考虑的原因
A-DATA Technology DDR4 2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 117
    左右 -290% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP31GF72CMP4D5Y5 8GB
A-DATA Technology DDR4 2400 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    117 left arrow 30
  • 读取速度，GB/s
    3,094.8 left arrow 16.8
  • 写入速度，GB/s
    2,303.7 left arrow 11.5
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    784 left arrow 3019

SK Hynix HYMP31GF72CMP4D5Y5 8GB RAM的比较

takeMS International AG TMS2GS264D081805AW 2GB
Kingston 9905315-124.A00LF 1GB

A-DATA Technology DDR4 2400 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA425S6AFR6N-UH 2GB
SK Hynix HMA425S6AFR6N-UH 2GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Team Group Inc. TEAMGROUP-UD4-3866 8GB
Team Group Inc. TEAMGROUP-UD4-3866 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD16GX4M4B3000C15 4GB
Corsair CMD16GX4M4B3000C15 4GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Kingston KHX3000C15D4/4GX 4GB
Kingston KHX3000C15D4/4GX 4GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3200C16-8GTZSW 8GB
G Skill Intl F4-3200C16-8GTZSW 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
内存RAM
Kingston KN2M64-ETB 8GB
Kingston KN2M64-ETB 8GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT16G4SFD8266 16GB
Crucial Technology CT16G4SFD8266 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMD16GX4M2K4133C19 8GB
Corsair CMD16GX4M2K4133C19 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Avant Technology J642GU42J5213N1 16GB
Avant Technology J642GU42J5213N1 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Maxsun MSD44G24Q3 4GB
Maxsun MSD44G24Q3 4GB
内存RAM