SK Hynix HYMP31GF72CMP4D5Y5 8GB vs Crucial Technology BL16G36C16U4R.M8FB1 16GB

总分

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分

Crucial Technology BL16G36C16U4R.M8FB1 16GB

Crucial Technology BL16G36C16U4R.M8FB1 16GB

差异规格评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB

需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB

报告一个错误

更快的读取速度，GB/s

3 18

测试中的平均数值
更快的写入速度，GB/s

2,303.7 14.5

测试中的平均数值

Crucial Technology BL16G36C16U4R.M8FB1 16GB

需要考虑的原因
Crucial Technology BL16G36C16U4R.M8FB1 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 117

左右 -303% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Crucial Technology BL16G36C16U4R.M8FB1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

117 29
读取速度，GB/s

3,094.8 18.0
写入速度，GB/s

2,303.7 14.5
内存带宽，mbps

5300 21300

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

no data 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

784 3672

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSA.8FAR 4GB

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A-DATA Technology DDR2 800G 2GB

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Samsung M378B5673EH1-CF8 2GB

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A-DATA Technology DQKD1A08 1GB

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Crucial Technology CB4GU2400.M8E 4GB

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AMD AE34G1601U1 4GB

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AMD AE34G1601U1 4GB

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Kingmax Semiconductor GLAF62F-D8---------- 4GB

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Samsung M3 78T2863EHS-CF7 1GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-2666C18-16GRS 16GB

G Skill Intl F4-2666C18-16GRS 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS8G4S240FSD.16FBD 8GB

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